Infineon HEXFET Type N-Channel MOSFET, 30 A, 80 V Enhancement, 4-Pin PQFN IRFH8311TRPBF

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Subtotal (1 pack of 15 units)*

PHP754.545

(exc. VAT)

PHP845.085

(inc. VAT)

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Units
Per Unit
Per Pack*
15 - 15PHP50.303PHP754.55
30 - 75PHP46.09PHP691.35
90 - 225PHP42.538PHP638.07
240 - 465PHP39.564PHP593.46
480 +PHP38.408PHP576.12

*price indicative

Packaging Options:
RS Stock No.:
222-4747
Mfr. Part No.:
IRFH8311TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

80V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

96W

Typical Gate Charge Qg @ Vgs

30nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.17mm

Length

5mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDSon (<1.15 mΩ)

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg tested

Low Profile (<0.9 mm)

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