Infineon HEXFET N-Channel MOSFET, 100 A, 25 V Enhancement, 4-Pin PQFN IRFH5250TRPBF
- RS Stock No.:
- 222-4745
- Mfr. Part No.:
- IRFH5250TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 222-4745
- Mfr. Part No.:
- IRFH5250TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.6W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.75mm | |
| Length | 6mm | |
| Standards/Approvals | RoHS | |
| Height | 900μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.15mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.6W | ||
Maximum Operating Temperature 150°C | ||
Width 4.75mm | ||
Length 6mm | ||
Standards/Approvals RoHS | ||
Height 900μm | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDSon (<1.15 mΩ)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Related links
- Infineon HEXFET N-Channel MOSFET 25 V Enhancement, 4-Pin PQFN
- Infineon HEXFET N-Channel MOSFET 80 V Enhancement, 4-Pin PQFN
- Infineon HEXFET N-Channel MOSFET 80 V Enhancement, 4-Pin PQFN IRFH8311TRPBF
- onsemi NTMT150N N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN
- onsemi NTMT190N N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN
- onsemi NTMT090N N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN NTMT090N65S3HF
- onsemi FCMT N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN
- onsemi NTMT110N N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN