onsemi NTMT190N Type N-Channel MOSFET, 20 A, 650 V Enhancement, 4-Pin PQFN
- RS Stock No.:
- 221-6739
- Mfr. Part No.:
- NTMT190N65S3HF
- Manufacturer:
- onsemi
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 221-6739
- Mfr. Part No.:
- NTMT190N65S3HF
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTMT190N | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 162W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Height | 8.1mm | |
| Width | 1.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTMT190N | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 162W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Height 8.1mm | ||
Width 1.1 mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 316 pF
100% avalanche tested
Related links
- onsemi NTMT190N Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN NTMT190N65S3HF
- onsemi NTMT110N Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN
- onsemi NTMT150N Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN
- onsemi NTMT090N Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN
- onsemi FCMT Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN
- onsemi FCMT Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN
- onsemi NTMT110N Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN NTMT110N65S3HF
- onsemi NTMT090N Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN NTMT090N65S3HF