onsemi FCMT Type N-Channel MOSFET, 10 A, 650 V Enhancement, 4-Pin PQFN

This image is representative of the product range

View all MOSFETs

Subtotal (1 reel of 3000 units)*

PHP381,240.00

(exc. VAT)

PHP426,990.00

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per Unit
Per Reel*
3000 +PHP127.08PHP381,240.00

*price indicative

RS Stock No.:
195-2502
Mfr. Part No.:
FCMT360N65S3
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

650V

Package Type

PQFN

Series

FCMT

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

18nC

Maximum Power Dissipation Pd

83W

Maximum Operating Temperature

150°C

Height

1.05mm

Standards/Approvals

No

Length

8mm

Automotive Standard

No

SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction(SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET III MOSFET is very suitable for the switching power applications such as server/telecom power, adapter and solar inverter applications. The Power88 package is an ultra-slim surface-mount package (1mm high) with a low profile and small footprint (8 * 8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources.

Related links