onsemi FCMT Type N-Channel MOSFET, 12 A, 650 V Enhancement, 4-Pin Power88 FCMT250N65S3

RS Stock No.:: 178-4657
Mfr. Part No.:: FCMT250N65S3
Manufacturer:: onsemi

onsemi FCMT Type N-Channel MOSFET, 12 A, 650 V Enhancement, 4-Pin Power88 FCMT250N65S3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

PHP1,606.45

(exc. VAT)

PHP1,799.22

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Last RS stock

Final 4,230 unit(s), ready to ship from another location

Units	Per Unit	Per Pack*
10 - 90	PHP160.645	PHP1,606.45
100 - 490	PHP155.827	PHP1,558.27
500 - 990	PHP151.152	PHP1,511.52
1000 +	PHP146.614	PHP1,466.14

*price indicative

RS Stock No.:: 178-4657
Mfr. Part No.:: FCMT250N65S3
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	650V
	Package Type	Power88
	Series	FCMT
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	90W
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	8mm
	Height	1.05mm
	Width	8 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 650V
	Package Type Power88
	Series FCMT
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 90W
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 8mm
	Height 1.05mm
	Width 8 mm
	Automotive Standard No

COO (Country of Origin):: PH

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

700 V @ TJ = 150 oC

Leadless Ultra-thin SMD package

Kelvin contact

Ultra Low Gate Charge (Typ. Qg = 24 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)

Optimized Capacitance

Typ. RDS(on) = 210 mΩ

Moisture Sensitivity Level 1 guarantee

Internal Gate Resistance: 0.5 Ω

Benefits:

Higher system reliability at low temperature operation

High power density

Low gate noise and switching loss

Low switching loss

Lower peak Vds and lower Vgs oscillation

Applications:

Computing

Telecommunication

Industrial

End Products:

Telecom / Server

Adapter

LED Lighting

onsemi FCMT Type N-Channel MOSFET, 12 A, 650 V Enhancement, 4-Pin Power88 FCMT250N65S3

FREE delivery for orders over ₱3,000.00

Related links