Infineon HEXFET Type N-Channel MOSFET, 12.5 A, 80 V PQFN IRL80HS120

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Subtotal (1 pack of 20 units)*

PHP636.62

(exc. VAT)

PHP713.02

(inc. VAT)

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Units
Per Unit
Per Pack*
20 - 20PHP31.831PHP636.62
40 - 80PHP31.034PHP620.68
100 - 220PHP30.258PHP605.16
240 - 480PHP29.502PHP590.04
500 +PHP28.764PHP575.28

*price indicative

Packaging Options:
RS Stock No.:
217-2640
Mfr. Part No.:
IRL80HS120
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12.5A

Maximum Drain Source Voltage Vds

80V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Maximum Drain Source Resistance Rds

42mΩ

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

7nC

Maximum Power Dissipation Pd

11.5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

2.1mm

Standards/Approvals

No

Width

1 mm

Length

2.1mm

Automotive Standard

No

The Infineon Available in three different voltage classes (60V, 80V and 100V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving.

Lowest FOM (R DS(on) x Q g/gd)

Optimized Q g, C oss, and Q rr for fast switching

Logic level compatibility

Tiny PQFN 2x2mm package

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