Infineon HEXFET Type N-Channel MOSFET, -5.1 A, -30 V, 6-Pin PQFN IRFHS9351TRPBF
- RS Stock No.:
- 257-9392
- Mfr. Part No.:
- IRFHS9351TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP302.94
(exc. VAT)
PHP339.29
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 3,990 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP30.294 | PHP302.94 |
| 50 - 90 | PHP29.385 | PHP293.85 |
| 100 - 490 | PHP27.622 | PHP276.22 |
| 500 - 1990 | PHP25.136 | PHP251.36 |
| 2000 + | PHP22.119 | PHP221.19 |
*price indicative
- RS Stock No.:
- 257-9392
- Mfr. Part No.:
- IRFHS9351TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -5.1A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 290mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.4W | |
| Typical Gate Charge Qg @ Vgs | 1.9nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Length | 2mm | |
| Width | 2 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -5.1A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 290mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.4W | ||
Typical Gate Charge Qg @ Vgs 1.9nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Length 2mm | ||
Width 2 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFHS series is the -30V dual p channel strong IRFET power mosfet in a PQFN 2x2 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount power package
Low RDS (on) in a small package
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