Infineon HEXFET Type N-Channel MOSFET, 25 A, 200 V Enhancement, 3-Pin TO-220 IRFB5620PBF

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Subtotal (1 tube of 50 units)*

PHP4,954.95

(exc. VAT)

PHP5,549.55

(inc. VAT)

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  • 1,500 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
50 - 50PHP99.099PHP4,954.95
100 - 200PHP96.126PHP4,806.30
250 - 450PHP93.243PHP4,662.15
500 - 950PHP90.445PHP4,522.25
1000 +PHP87.732PHP4,386.60

*price indicative

RS Stock No.:
124-9009
Mfr. Part No.:
IRFB5620PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

73mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

14W

Maximum Operating Temperature

175°C

Length

10.67mm

Width

4.83 mm

Standards/Approvals

No

Height

9.02mm

Automotive Standard

No

COO (Country of Origin):
MX

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