Vishay SiK N channel-Channel MOSFET, 795 A, 40 V Enhancement, 8-Pin PowerPAK 10 x 12 SiJK140E

N
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Subtotal (1 unit)*

PHP705.50

(exc. VAT)

PHP790.16

(inc. VAT)

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Units
Per Unit
1 - 9PHP705.50
10 - 49PHP437.57
50 - 99PHP338.40
100 +PHP228.79

*price indicative

RS Stock No.:
735-142
Mfr. Part No.:
SiJK140E
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

795A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK 10 x 12

Series

SiK

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00047Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

312nC

Maximum Power Dissipation Pd

536W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

40V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Length

12mm

Width

10mm

Standards/Approvals

RoHS

Height

4mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

0.21°C/W low RthJC for optimal thermal performance

312nC typical total gate charge

Standard level FET with 2.4V minimum VGS

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