Vishay S N channel-Channel MOSFET, 28 A, 650 V N, 8-Pin PowerPAK 10 x 12 SIHK135N65S-T1-GE3

N
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Subtotal (1 tape of 1 unit)*

PHP169.65

(exc. VAT)

PHP190.01

(inc. VAT)

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  • Shipping from January 25, 2027
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Tape(s)
Per Tape
1 - 9PHP169.65
10 - 24PHP110.64
25 - 99PHP65.46
100 - 499PHP63.62
500 +PHP62.70

*price indicative

RS Stock No.:
878-898
Mfr. Part No.:
SIHK135N65S-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

650V

Series

S

Package Type

PowerPAK 10 x 12

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.121Ω

Channel Mode

N

Maximum Power Dissipation Pd

278W

Typical Gate Charge Qg @ Vgs

51nC

Forward Voltage Vf

1.4V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay Power MOSFET designed to manage switching and conduction efficiently, making it an essential component for various power supply applications.

Latest generation SF series technology, ensuring optimal performance

Low figure of merit (FOM) for enhanced energy efficiency

Avalanche energy rated, offering improved reliability under stress

Single Pulse avalanche energy capacity, catering to demanding applications

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