Vishay SiK N channel-Channel MOSFET, 417 A, 100 V Enhancement, 8-Pin PowerPAK 10 x 12 SiJK5100E

N
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PHP568.06

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PHP636.23

(inc. VAT)

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Per Unit
1 - 9PHP568.06
10 - 49PHP352.32
50 - 99PHP272.28
100 +PHP183.55

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RS Stock No.:
735-161
Mfr. Part No.:
SiJK5100E
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

417A

Maximum Drain Source Voltage Vds

100V

Series

SiK

Package Type

PowerPAK 10 x 12

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0014Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

131nC

Maximum Power Dissipation Pd

536W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

100V

Maximum Operating Temperature

175°C

Height

4mm

Standards/Approvals

RoHS

Length

12mm

Width

10mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

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