Vishay E Type N-Channel Single MOSFETs, 32 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3

N

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Subtotal (1 reel of 3000 units)*

PHP771,354.00

(exc. VAT)

PHP863,916.00

(inc. VAT)

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3000 +PHP257.118PHP771,354.00

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RS Stock No.:
653-083
Mfr. Part No.:
SIHR120N60E-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

32A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK

Series

E

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.12Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

29nC

Maximum Power Dissipation Pd

278W

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Width

8 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay 4th generation E Series Power MOSFET optimized for high-performance switching applications. It offers a low figure of merit (FOM), reduced switching and conduction losses, and low effective capacitance. Packaged in the Compact PowerPAK 8x8LR, it's Ideal for use in server, telecom, lighting, and industrial power supplies.

Pb Free

Halogen free

RoHS compliant

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