Vishay E Type N-Channel Single MOSFETs, 38 A, 600 V Enhancement, 8-Pin PowerPAK SIHR100N60E-T1-GE3

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Subtotal (1 reel of 3000 units)*

PHP879,978.00

(exc. VAT)

PHP985,575.00

(inc. VAT)

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3000 +PHP293.326PHP879,978.00

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RS Stock No.:
653-079
Mfr. Part No.:
SIHR100N60E-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

38A

Maximum Drain Source Voltage Vds

600V

Series

E

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.105Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

347W

Typical Gate Charge Qg @ Vgs

34nC

Maximum Operating Temperature

150°C

Width

8 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay 4th generation E Series Power MOSFET designed for high-efficiency switching applications. It features a low figure of merit (FOM), reduced effective capacitance, and optimized thermal performance in a Compact PowerPAK 8x8LR package. Ideal for use in server, telecom, and power factor correction supplies, it delivers reliable performance in demanding environments.

Reduced switching and conduction losses

Pb Free

Halogen free

RoHS compliant

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