Vishay EF Type N-Channel Power MOSFET, 38 A, 600 V Enhancement, 8-Pin PowerPAK SIHR100N60EF-T1GE3

RS Stock No.:: 653-077
Mfr. Part No.:: SIHR100N60EF-T1GE3
Manufacturer:: Vishay

Vishay EF Type N-Channel Power MOSFET, 38 A, 600 V Enhancement, 8-Pin PowerPAK SIHR100N60EF-T1GE3

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

PHP879,978.00

(exc. VAT)

PHP985,575.00

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per Unit	Per Reel*
3000 +	PHP293.326	PHP879,978.00

*price indicative

RS Stock No.:: 653-077
Mfr. Part No.:: SIHR100N60EF-T1GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	38A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerPAK
	Series	EF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.108Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	347W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Operating Temperature	150°C
	Length	10.42mm
	Standards/Approvals	RoHS
	Width	8mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 38A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerPAK
	Series EF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.108Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 347W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Operating Temperature 150°C
	Length 10.42mm
	Standards/Approvals RoHS
	Width 8mm
	Automotive Standard No

Datasheet - SIHR100N60EF-T1GE3

COO (Country of Origin):: CN

Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 38A Maximum Continuous Drain Current - SIHR100N60EF-T1GE3

This power MOSFET is a high-voltage N-channel switch designed for surface-mount power conversion and switching applications. It operates within a broad temperature range suitable for demanding industrial environments and is intended for use where robust drain-source voltage handling and elevated power dissipation are required. The component is supplied in a low-profile PowerPAK package to support Compact board layouts and effective thermal management.

Features and Benefits:

• 600V maximum Vds delivers high-voltage switching capability • 38A continuous drain current enables substantial load handling • 0.108Ω Rds(on) minimises conduction losses at rated current • 347W maximum Pd supports high-power dissipation needs • 35nC typical gate charge aids efficient switching performance

Applications

• Suitable for high-voltage switch-mode power supplies • Ideal for industrial motor drive inverter stages • Used for power factor correction circuits in AC systems • Can be used for DC-DC converters in automation equipment • Suitable for high-voltage switching in power distribution units

What limits should I observe for gate-drive voltage?

The gate-source voltage must not exceed 30V to prevent gate dielectric stress.

How does thermal endurance relate to operating limits?

The device is rated to operate up to 150°C junction temperature, allowing continued operation under elevated thermal conditions with appropriate PCB heat-sinking.

What is the acceptable ambient temperature range for deployment?

It supports operation down to -55°C, making it suitable for low-temperature industrial environments.

How many pins does the package provide for board connection?

The component uses an 8-pin configuration in the PowerPAK surface-mount package.

Is this intended for automotive qualification?

It is not specified as meeting automotive standard approvals.