Vishay EF Type N-Channel Single MOSFETs, 31 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60EF-T1GE3

N

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Subtotal (1 reel of 3000 units)*

PHP780,243.00

(exc. VAT)

PHP873,873.00

(inc. VAT)

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3000 +PHP260.081PHP780,243.00

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RS Stock No.:
653-081
Mfr. Part No.:
SIHR120N60EF-T1GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

600V

Series

EF

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.125Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

278W

Typical Gate Charge Qg @ Vgs

45nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

8 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay 4th generation E Series Power MOSFET featuring a fast body diode for improved switching efficiency. It delivers a low figure of merit (FOM), reduced effective capacitance, and minimized switching and conduction losses. Housed in a PowerPAK 8x8LR package, it's Ideal for server, telecom, lighting, industrial, and solar power applications.

Pb Free

Halogen free

RoHS compliant

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