Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 89 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14

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PHP3,535.58

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PHP3,959.85

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Being discontinued
  • Final 29 unit(s), ready to ship from another location

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Packaging Options:
RS Stock No.:
284-864
Mfr. Part No.:
IMYH200R024M1HXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

89A

Maximum Drain Source Voltage Vds

2000V

Series

CoolSiC 2000 V SiC Trench MOSFET

Package Type

PG-TO-247-4-PLUS-NT14

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

137nC

Maximum Power Dissipation Pd

576W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
MY

Infineon CoolSiC 2000 V SiC Trench MOSFET Series MOSFET, 2000V Maximum Drain Source Voltage, 89A Maximum Continuous Drain Current - IMYH200R024M1HXKSA1


This MOSFET is a silicon carbide power transistor designed for high-voltage switching in demanding power-electronic environments. It operates as an N-channel enhancement device and is supplied in a through-hole PG-TO-247-4 package that facilitates robust mounting and heat removal in industrial assemblies. The component is intended for applications requiring high blocking voltages and sustained current handling across a wide temperature range.

Features and Benefits:


• 2000V drain-source withstand for high-voltage systems
• 89A continuous drain current for heavy-load operation
• 35mΩ Rds(on) to minimise conduction losses
• 576W maximum power dissipation for thermal endurance
• 137nC typical gate charge at Vgs to inform drive sizing
• Operates from -55°C to 175°C for extended temperature margins

Applications


• Suitable for traction inverter high-voltage stages
• Ideal for utility-scale power conversion equipment
• Used with high-voltage DC-DC converter modules
• Can be used for industrial motor drives and controllers
• Suitable for solid-state circuit breaker designs

What mounting format does it require for assembly?


It is supplied in a PG-TO-247-4 through-hole package requiring a compatible heatsink and secured mounting to achieve specified power dissipation.

What gate drive limitations should be observed?


The maximum gate-to-source voltage is 20V so gate drivers must limit Vgs to that value to avoid damage.

How does the device behave thermally at high load?


The transistor can dissipate up to 576W under appropriate cooling

thermal management must be designed to maintain junction temperatures within operating limits.

Is it suitable for automotive-grade projects?


It is not specified to meet automotive standards and should not be selected where automotive qualification is required.

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