Infineon CoolSiC Type N-Channel MOSFET, 89 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R016M1HXKSA1
- RS Stock No.:
- 348-938
- Mfr. Part No.:
- AIMZA75R016M1HXKSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
PHP2,108.60
(exc. VAT)
PHP2,361.63
(inc. VAT)
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- 240 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP2,108.60 |
| 10 - 99 | PHP1,897.39 |
| 100 + | PHP1,749.90 |
*price indicative
- RS Stock No.:
- 348-938
- Mfr. Part No.:
- AIMZA75R016M1HXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 89A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | PG-TO247-4 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 319W | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 89A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type PG-TO247-4 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 319W | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 750 V CoolSiC MOSFET is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgapSiC material characteristics, the 750V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Infineon proprietary die attach technology
Driver source pin available
Enhanced robustness and reliability for bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Reduced switching losses through improved gate control
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