Infineon CoolSiC Type N-Channel MOSFET, 34 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R075M1HXKSA1

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RS Stock No.:
349-113
Mfr. Part No.:
IMYH200R075M1HXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

2000V

Package Type

PG-TO-247-4-PLUS-NT14

Series

CoolSiC

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

106mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

267W

Typical Gate Charge Qg @ Vgs

64nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
MY

Infineon CoolSiC Series MOSFET, 34A Maximum Continuous Drain Current, 2000V Maximum Drain Source Voltage - IMYH200R075M1HXKSA1


This MOSFET is a silicon carbide power transistor designed for high-voltage switching in demanding industrial and power-conversion environments. It operates across an extended temperature span and is housed in a multi-lead through-hole package suited to robust assembly and heat management. The device is intended for applications requiring substantial continuous current handling and elevated power dissipation.

Features and Benefits:


• 2000V drain capability enabling very high-voltage switching
• 34A continuous drain current for sustained power delivery
• 267W maximum power dissipation aiding thermal design headroom
• 106mΩ Rds(on) reducing conduction losses in high-current paths
• 64nC typical gate charge for predictable switching energy
• Through-hole PG-TO-247-4-PLUS-NT14 simplifies heatsinking integration

Applications


• Suitable for high-voltage converters and inverters
• Ideal for industrial motor drive power stages
• Used for high-power switch-mode power supplies
• Can be used for renewable-energy power electronics
• Suitable for traction and heavy-duty power modules

What gate voltage limits must designers respect when driving it?


The gate-source rating is ±20V, so gate-drive circuitry should limit excursions within this range to prevent gate-oxide stress.

How does the device cope with harsh thermal environments?


It is specified to function from -55°C up to 175°C, allowing designs to tolerate wide ambient and junction temperature swings.

What pin configuration and mounting approach does it use?


The component comes in a four-lead PG-TO-247-4-PLUS-NT14 through-hole package, enabling secure PCB mounting and direct attachment to heatsinks.

Are there material or environmental restrictions for use?


It is RoHS-compliant, so it conforms to lead-free material requirements for electronic assemblies.

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