Infineon CoolSiC Type N-Channel MOSFET, 26 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R100M1HXKSA1

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PHP1,180.40

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PHP1,322.05

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10 - 99PHP1,062.24
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RS Stock No.:
349-114
Mfr. Part No.:
IMYH200R100M1HXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

2000V

Package Type

PG-TO-247-4-PLUS-NT14

Series

CoolSiC

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

142mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

55nC

Maximum Power Dissipation Pd

217W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
MY

Infineon CoolSiC Series MOSFET, 2000V Drain Source Voltage, 26A Continuous Drain Current - IMYH200R100M1HXKSA1


This MOSFET is a silicon carbide N-channel enhancement device designed for high-voltage switching in demanding electronic systems. It provides a robust solution for converting or controlling large voltages and currents in through-hole implementations, operating across an extended ambient temperature range for use in harsh environments.

Features and Benefits:


• 2000V drain-to-source withstand simplifies high-voltage designs
• 26A continuous drain current supports sustained power delivery
• 217W maximum power dissipation aids thermal margin planning
• 142 mΩ Rds(on) reduces conduction losses under load
• 55 nC typical gate charge enables manageable drive energy
• Through-hole PG-TO-247-4-PLUS-NT14 package eases mounting and cooling

Applications


• Suitable for high-voltage power converters and inverters
• Ideal for industrial motor drive power stages
• Used with energy storage and grid-tie interface circuits
• Can be used for high-voltage test and measurement equipment
• Appropriate for traction and heavy-duty power electronics modules

What voltage and polarity rating should designers expect for switching?


The device is rated to withstand 2000V between drain and source and is configured as an N-channel transistor, so designs must account for high-voltage clearance and appropriate gate-drive referencing.

How does gate-drive energy influence gate driver selection?


With a typical gate charge of 55 nC, gate drivers should be chosen to supply sufficient peak current to achieve the required switching speed while controlling dv/dt to limit electromagnetic stress.

What thermal considerations are necessary for reliable operation?


The component dissipates up to 217W under specified conditions, so thermal management including heatsinking and PCB thermal conductance must be engineered to maintain junction temperatures within limits.

Which mounting approach does the package support and what are the implications?


The PG-TO-247-4-PLUS-NT14 through-hole format facilitates mechanical stability and direct heatsink attachment, simplifying assembly for high-power applications.

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