Infineon 64 kB SPI FRAM 8-Pin SOIC

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Subtotal (1 tube of 97 units)*

PHP20,556.531

(exc. VAT)

PHP23,023.338

(inc. VAT)

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  • 2,134 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
97 - 97PHP211.923PHP20,556.53
194 - 485PHP205.565PHP19,939.81
582 - 970PHP199.398PHP19,341.61
1067 +PHP193.416PHP18,761.35

*price indicative

RS Stock No.:
188-5413
Mfr. Part No.:
FM25CL64B-G
Manufacturer:
Infineon
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Brand

Infineon

Memory Size

64kB

Product Type

FRAM

Organisation

8K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

20ns

Maximum Clock Frequency

20MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

8

Length

4.5mm

Standards/Approvals

No

Height

0.75mm

Width

4 mm

Maximum Operating Temperature

85°C

Automotive Standard

AEC-Q100

Number of Bits per Word

8

Minimum Supply Voltage

2.7V

Maximum Supply Voltage

3.65V

Minimum Operating Temperature

-40°C

Number of Words

8K

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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