Infineon 64 kB SPI FRAM 8-Pin SOIC, FM25CL64B-G

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Subtotal (1 pack of 2 units)*

PHP485.40

(exc. VAT)

PHP543.64

(inc. VAT)

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Orders below PHP3,000.00 (exc. VAT) cost PHP150.00.
Temporarily out of stock
  • 36 unit(s) shipping from February 09, 2026
  • Plus 2,124 unit(s) shipping from February 10, 2026
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Units
Per Unit
Per Pack*
2 - 8PHP242.70PHP485.40
10 - 48PHP220.595PHP441.19
50 - 98PHP214.15PHP428.30
100 - 498PHP192.505PHP385.01
500 +PHP184.21PHP368.42

*price indicative

Packaging Options:
RS Stock No.:
125-4222
Mfr. Part No.:
FM25CL64B-G
Manufacturer:
Infineon
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Brand

Infineon

Memory Size

64kB

Product Type

FRAM

Organisation

8K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

20ns

Maximum Clock Frequency

20MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

8

Standards/Approvals

No

Width

4 mm

Height

0.75mm

Length

4.5mm

Maximum Operating Temperature

85°C

Number of Bits per Word

8

Automotive Standard

AEC-Q100

Maximum Supply Voltage

3.65V

Minimum Supply Voltage

2.7V

Number of Words

8K

Minimum Operating Temperature

-40°C

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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