Infineon 64 kB SPI FRAM 8-Pin DFN

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Subtotal (1 tube of 81 units)*

PHP13,212.801

(exc. VAT)

PHP14,798.376

(inc. VAT)

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Units
Per Unit
Per Tube*
81 - 81PHP163.121PHP13,212.80
162 - 486PHP159.043PHP12,882.48
567 - 972PHP155.067PHP12,560.43
1053 +PHP151.19PHP12,246.39

*price indicative

RS Stock No.:
188-5412
Mfr. Part No.:
FM25CL64B-DG
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

64kB

Organisation

8K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

20ns

Mount Type

Surface

Maximum Clock Frequency

20MHz

Package Type

DFN

Pin Count

8

Width

4 mm

Standards/Approvals

No

Length

4.5mm

Height

0.75mm

Maximum Operating Temperature

85°C

Minimum Operating Temperature

-40°C

Number of Bits per Word

8

Number of Words

8K

Automotive Standard

No

Minimum Supply Voltage

2.7V

Maximum Supply Voltage

3.65V

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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