Infineon 256 kB 2 Wire I2C FRAM 8-Pin SOIC

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Bulk discount available

Subtotal (1 tube of 97 units)*

PHP28,130.00

(exc. VAT)

PHP31,505.60

(inc. VAT)

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  • 873 unit(s) shipping from April 02, 2026
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Units
Per Unit
Per Tube*
97 - 97PHP290.00PHP28,130.00
194 - 194PHP281.30PHP27,286.10
291 - 485PHP272.861PHP26,467.52
582 - 970PHP264.675PHP25,673.48
1067 +PHP256.735PHP24,903.30

*price indicative

RS Stock No.:
188-5407
Mfr. Part No.:
FM24W256-G
Manufacturer:
Infineon
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Brand

Infineon

Memory Size

256kB

Product Type

FRAM

Organisation

32K x 8 Bit

Interface Type

2 Wire I2C

Data Bus Width

8bit

Maximum Random Access Time

3000ns

Mount Type

Surface

Maximum Clock Frequency

1MHz

Package Type

SOIC

Pin Count

8

Width

3.98 mm

Standards/Approvals

No

Height

1.38mm

Length

4.97mm

Maximum Operating Temperature

85°C

Number of Bits per Word

8

Automotive Standard

AEC-Q100

Minimum Supply Voltage

2.7V

Maximum Supply Voltage

5.5V

Minimum Operating Temperature

-40°C

Number of Words

32k

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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