Infineon 16 kB 2 Wire I2C FRAM 8-Pin DFN

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Subtotal (1 tube of 81 units)*

PHP9,860.535

(exc. VAT)

PHP11,043.783

(inc. VAT)

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Units
Per Unit
Per Tube*
81 - 81PHP121.735PHP9,860.54
162 - 243PHP109.066PHP8,834.35
324 - 486PHP104.846PHP8,492.53
567 +PHP100.617PHP8,149.98

*price indicative

RS Stock No.:
188-5399
Mfr. Part No.:
FM24CL16B-DG
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

16kB

Organisation

2K x 8 bit

Interface Type

2 Wire I2C

Data Bus Width

8bit

Maximum Random Access Time

3000ns

Mount Type

Surface

Maximum Clock Frequency

1MHz

Package Type

DFN

Pin Count

8

Height

0.75mm

Length

4.5mm

Width

4 mm

Standards/Approvals

No

Maximum Operating Temperature

85°C

Number of Bits per Word

8

Minimum Operating Temperature

-40°C

Number of Words

2k

Automotive Standard

AEC-Q100

Minimum Supply Voltage

2.7V

Maximum Supply Voltage

3.65V

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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