Infineon 1 MB 2 Wire I2C FRAM 8-Pin SOIC

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Subtotal (1 tube of 97 units)*

PHP90,231.437

(exc. VAT)

PHP101,059.256

(inc. VAT)

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  • Plus 97 unit(s) shipping from February 02, 2026
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Units
Per Unit
Per Tube*
97 - 97PHP930.221PHP90,231.44
194 - 194PHP902.314PHP87,524.46
291 - 485PHP875.245PHP84,898.77
582 +PHP848.988PHP82,351.84

*price indicative

RS Stock No.:
188-5405
Mfr. Part No.:
FM24V10-G
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

1MB

Organisation

128K x 8 bit

Interface Type

2 Wire I2C

Data Bus Width

8bit

Maximum Random Access Time

450ns

Maximum Clock Frequency

3.4MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

8

Standards/Approvals

No

Length

4.97mm

Height

1.38mm

Width

3.98 mm

Maximum Operating Temperature

85°C

Number of Words

128k

Minimum Operating Temperature

-40°C

Maximum Supply Voltage

3.6V

Number of Bits per Word

8

Minimum Supply Voltage

2V

Automotive Standard

AEC-Q100

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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