Infineon 1 MB 2 Wire I2C FRAM 8-Pin SOIC, FM24V10-G

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Subtotal (1 unit)*

PHP998.67

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PHP1,118.51

(inc. VAT)

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1 - 9PHP998.67
10 - 49PHP968.71
50 - 99PHP939.64
100 - 499PHP911.44
500 +PHP884.09

*price indicative

Packaging Options:
RS Stock No.:
125-4215
Mfr. Part No.:
FM24V10-G
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

1MB

Organisation

128K x 8 bit

Interface Type

2 Wire I2C

Data Bus Width

8bit

Maximum Random Access Time

450ns

Mount Type

Surface

Maximum Clock Frequency

3.4MHz

Package Type

SOIC

Pin Count

8

Height

1.38mm

Width

3.98 mm

Standards/Approvals

No

Length

4.97mm

Maximum Operating Temperature

85°C

Automotive Standard

AEC-Q100

Number of Words

128k

Minimum Operating Temperature

-40°C

Maximum Supply Voltage

3.6V

Minimum Supply Voltage

2V

Number of Bits per Word

8

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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