Toshiba RN1106(TE85L,F) NPN Digital Transistor, 100 mA, 50 V, 3-Pin ESM

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Subtotal (1 pack of 5 units)*

PHP24.62

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PHP27.575

(inc. VAT)

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25 - 120PHP4.776PHP23.88
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RS Stock No.:
540-6554
Mfr. Part No.:
RN1106(TE85L,F)
Manufacturer:
Toshiba
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Brand

Toshiba

Transistor Type

NPN

Maximum DC Collector Current

100 mA

Maximum Collector Emitter Voltage

50 V

Package Type

ESM

Mounting Type

Surface Mount

Minimum DC Current Gain

80

Transistor Configuration

Single

Maximum Emitter Base Voltage

5 V

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Input Resistor

4.7 kΩ

Typical Resistor Ratio

0.1

Dimensions

1.6 x 0.8 x 0.7mm

RoHS Status: Exempt

COO (Country of Origin):
JP

Transistor with Built-in Resistor, BRT Series, Toshiba


Built-in bias resistors, use of fewer parts enables device size reduction and space-saving assembly
Wide resistance-value range makes product suitable for diverse applications
Complementary to products from RN1101 / RN2101 to RN1118 / RN2118
Applications: switching, inverter circuits, interface circuits, driver circuits
SSM package


Digital Transistors, Toshiba


Resistor-equipped bipolar transistors, also known as “Digital Transistors” or “Bias Resistor Transistors”, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.

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