Toshiba RN1103(F) Digital Transistor, 100 mA NPN, 50 V, 3-Pin ESM

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PHP18.94

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PHP21.215

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In Stock
  • Plus 545 unit(s) shipping from February 23, 2026
  • Plus 1,855 unit(s) shipping from March 02, 2026
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Units
Per Unit
Per Pack*
5 - 20PHP3.788PHP18.94
25 - 120PHP3.674PHP18.37
125 - 245PHP3.562PHP17.81
250 - 495PHP3.456PHP17.28
500 +PHP3.354PHP16.77

*price indicative

RS Stock No.:
540-6497
Mfr. Part No.:
RN1103(F)
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

Digital Transistor

Maximum DC Collector Current Idc

100mA

Maximum Collector Emitter Voltage Vceo

50V

Package Type

ESM

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

50V

Minimum Operating Temperature

-55°C

Maximum Emitter Base Voltage VEBO

10V

Minimum DC Current Gain hFE

70

Transistor Polarity

NPN

Maximum Power Dissipation Pd

100mW

Maximum Transition Frequency ft

250MHz

Maximum Operating Temperature

150°C

Pin Count

3

Height

0.7mm

Width

0.8 mm

Standards/Approvals

No

Length

1.6mm

Series

RN1103

Automotive Standard

No

COO (Country of Origin):
JP

Transistor with Built-in Resistor, BRT Series, Toshiba


Built-in bias resistors, use of fewer parts enables device size reduction and space-saving assembly

Wide resistance-value range makes product suitable for diverse applications

Complementary to products from RN1101 / RN2101 to RN1118 / RN2118

Applications: switching, inverter circuits, interface circuits, driver circuits

SSM package

Digital Transistors, Toshiba


Resistor-equipped bipolar transistors, also known as “Digital Transistors” or “Bias Resistor Transistors”, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.

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