Toshiba RN2105(TE85L,F) Digital Transistor, -100 mA PNP, -50 V, 3-Pin ESM
- RS Stock No.:
- 540-6548
- Mfr. Part No.:
- RN2105(TE85L,F)
- Manufacturer:
- Toshiba
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
PHP37.88
(exc. VAT)
PHP42.425
(inc. VAT)
Add 615 units to get free delivery
In Stock
- Plus 305 unit(s) shipping from February 23, 2026
- Plus 2,400 unit(s) shipping from March 02, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP7.576 | PHP37.88 |
| 25 - 120 | PHP6.568 | PHP32.84 |
| 125 - 245 | PHP5.378 | PHP26.89 |
| 250 - 495 | PHP4.944 | PHP24.72 |
| 500 + | PHP4.884 | PHP24.42 |
*price indicative
- RS Stock No.:
- 540-6548
- Mfr. Part No.:
- RN2105(TE85L,F)
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | Digital Transistor | |
| Maximum DC Collector Current Idc | -100mA | |
| Maximum Collector Emitter Voltage Vceo | -50V | |
| Package Type | ESM | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | -50V | |
| Minimum DC Current Gain hFE | 80 | |
| Maximum Transition Frequency ft | 200MHz | |
| Maximum Power Dissipation Pd | 100mW | |
| Transistor Polarity | PNP | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.6mm | |
| Series | RN2105 | |
| Width | 0.8 mm | |
| Height | 0.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type Digital Transistor | ||
Maximum DC Collector Current Idc -100mA | ||
Maximum Collector Emitter Voltage Vceo -50V | ||
Package Type ESM | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO -50V | ||
Minimum DC Current Gain hFE 80 | ||
Maximum Transition Frequency ft 200MHz | ||
Maximum Power Dissipation Pd 100mW | ||
Transistor Polarity PNP | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum Operating Temperature -55°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 1.6mm | ||
Series RN2105 | ||
Width 0.8 mm | ||
Height 0.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
Transistor with Built-in Resistor, BRT Series, Toshiba
Built-in bias resistors, use of fewer parts enables device size reduction and space-saving assembly
Wide resistance-value range makes product suitable for diverse applications
Complementary to products from RN1101 / RN2101 to RN1118 / RN2118
Applications: switching, inverter circuits, interface circuits, driver circuits
SSM package
Digital Transistors, Toshiba
Resistor-equipped bipolar transistors, also known as “Digital Transistors” or “Bias Resistor Transistors”, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.
Related links
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