onsemi BUB323ZT4G Digital Transistor, 6 V NPN 10 A Surface, 2-Pin

This image is representative of the product range

View all Bipolar Transistors
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
186-8010
Mfr. Part No.:
BUB323ZT4G
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Product Type

Digital Transistor

Maximum Collector Emitter Voltage Vceo

6V

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Transistor Polarity

NPN

Maximum Continuous Collector Current Ic

10A

Maximum Power Dissipation Pd

150W

Minimum DC Current Gain hFE

150

Maximum Emitter Base Voltage VEBO

6V

Pin Count

2

Maximum Operating Temperature

175°C

Height

4.06mm

Width

10.29 mm

Length

9.65mm

Standards/Approvals

RoHS, Pb-Free

Series

BUB323Z

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
The BUB323Z is a planar, monolithic, high voltage bipolar power Darlington transistor with a built-in Active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control.

Integrated High–Voltage Active Clamp

Tight Clamping Voltage Window (350 V to 450 V)Guaranteed Over the –40°C to +125°C Temperature Range

Clamping Energy Capability 100% Tested in a Live Ignition Circuit

High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range

Design Guarantees Operation in SOA at All Times

Pb-Free Packages are Available

Related links