onsemi MUN5212DW1T1G Digital Transistor, 50 V NPN 100 mA Surface SOT-363, 6-Pin

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Subtotal (1 pack of 50 units)*

PHP401.80

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PHP450.00

(inc. VAT)

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Per Unit
Per Pack*
50 - 50PHP8.036PHP401.80
100 - 200PHP7.795PHP389.75
250 - 450PHP7.562PHP378.10
500 - 950PHP7.335PHP366.75
1000 +PHP7.114PHP355.70

*price indicative

Packaging Options:
RS Stock No.:
186-8437
Mfr. Part No.:
MUN5212DW1T1G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Digital Transistor

Package Type

SOT-363

Maximum Collector Emitter Voltage Vceo

50V

Mount Type

Surface

Transistor Configuration

Dual

Maximum Collector Base Voltage VCBO

50V

Maximum Power Dissipation Pd

385mW

Transistor Polarity

NPN

Maximum Collector Emitter Saturation Voltage VceSAT

0.25V

Minimum DC Current Gain hFE

60

Maximum Continuous Collector Current Ic

100mA

Maximum Operating Temperature

150°C

Pin Count

6

Length

2.2mm

Width

2.2 mm

Height

1.1mm

Standards/Approvals

RoHS, Pb-Free

Automotive Standard

AEC-Q101

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable

These Devices are Pb-Free, Halogen Free/BFR Free

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