onsemi Digital Transistor, 50 V NPN 100 mA Surface SOT-363, 6-Pin
- RS Stock No.:
- 186-7183
- Mfr. Part No.:
- MUN5212DW1T1G
- Manufacturer:
- onsemi
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 186-7183
- Mfr. Part No.:
- MUN5212DW1T1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | SOT-363 | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Mount Type | Surface | |
| Transistor Configuration | Dual | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Maximum Power Dissipation Pd | 385mW | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 0.25V | |
| Maximum Continuous Collector Current Ic | 100mA | |
| Minimum DC Current Gain hFE | 60 | |
| Transistor Polarity | NPN | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.2 mm | |
| Length | 2.2mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Digital Transistor | ||
Package Type SOT-363 | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Mount Type Surface | ||
Transistor Configuration Dual | ||
Maximum Collector Base Voltage VCBO 50V | ||
Maximum Power Dissipation Pd 385mW | ||
Maximum Collector Emitter Saturation Voltage VceSAT 0.25V | ||
Maximum Continuous Collector Current Ic 100mA | ||
Minimum DC Current Gain hFE 60 | ||
Transistor Polarity NPN | ||
Pin Count 6 | ||
Maximum Operating Temperature 150°C | ||
Width 2.2 mm | ||
Length 2.2mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
These Devices are Pb-Free, Halogen Free/BFR Free
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