onsemi Digital Transistor, -80 V PNP 10 A Surface, 2-Pin

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Subtotal (1 tube of 50 units)*

PHP2,394.00

(exc. VAT)

PHP2,681.50

(inc. VAT)

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Units
Per Unit
Per Tube*
50 - 200PHP47.88PHP2,394.00
250 - 450PHP46.444PHP2,322.20
500 - 1200PHP44.586PHP2,229.30
1250 - 2450PHP42.356PHP2,117.80
2500 +PHP39.815PHP1,990.75

*price indicative

RS Stock No.:
186-7405
Mfr. Part No.:
MJB45H11G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Digital Transistor

Maximum Collector Emitter Voltage Vceo

-80V

Mount Type

Surface

Transistor Configuration

Single

Maximum Emitter Base Voltage VEBO

5V

Maximum Collector Emitter Saturation Voltage VceSAT

1V

Transistor Polarity

PNP

Minimum DC Current Gain hFE

60

Maximum Continuous Collector Current Ic

10A

Maximum Power Dissipation Pd

50W

Maximum Operating Temperature

150°C

Pin Count

2

Standards/Approvals

UL 94 V-0

Height

8.64mm

Length

9.65mm

Width

4.83 mm

Series

MJB45H

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.

Low Collector-Emitter Saturation Voltage -

VCE(sat) = 1.0 V (Max) @ 8.0 A

Fast Switching Speeds

Complementary Pairs Simplifies Designs

NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable

PbFree Packages are Available

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