onsemi Digital Transistor, -80 V PNP 10 A Surface, 2-Pin
- RS Stock No.:
- 186-7405
- Mfr. Part No.:
- MJB45H11G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
PHP2,394.00
(exc. VAT)
PHP2,681.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 200 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 200 | PHP47.88 | PHP2,394.00 |
| 250 - 450 | PHP46.444 | PHP2,322.20 |
| 500 - 1200 | PHP44.586 | PHP2,229.30 |
| 1250 - 2450 | PHP42.356 | PHP2,117.80 |
| 2500 + | PHP39.815 | PHP1,990.75 |
*price indicative
- RS Stock No.:
- 186-7405
- Mfr. Part No.:
- MJB45H11G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Maximum Continuous Collector Current Ic | 10A | |
| Maximum Power Dissipation Pd | 50W | |
| Transistor Polarity | PNP | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1V | |
| Minimum DC Current Gain hFE | 60 | |
| Pin Count | 2 | |
| Maximum Operating Temperature | 150°C | |
| Height | 8.64mm | |
| Length | 9.65mm | |
| Standards/Approvals | UL 94 V-0 | |
| Series | MJB45H | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Maximum Continuous Collector Current Ic 10A | ||
Maximum Power Dissipation Pd 50W | ||
Transistor Polarity PNP | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1V | ||
Minimum DC Current Gain hFE 60 | ||
Pin Count 2 | ||
Maximum Operating Temperature 150°C | ||
Height 8.64mm | ||
Length 9.65mm | ||
Standards/Approvals UL 94 V-0 | ||
Series MJB45H | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
PbFree Packages are Available