onsemi BDX33BG NPN Digital Transistor, 80 V dc, 3-Pin TO-220

View all Bipolar Transistors
Bulk discount available

Subtotal (1 tube of 50 units)*

PHP1,881.60

(exc. VAT)

PHP2,107.40

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 50 unit(s) shipping from March 04, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Tube*
50 - 200PHP37.632PHP1,881.60
250 - 450PHP36.503PHP1,825.15
500 - 1200PHP35.408PHP1,770.40
1250 - 2450PHP34.345PHP1,717.25
2500 +PHP33.315PHP1,665.75

*price indicative

RS Stock No.:
186-7366
Mfr. Part No.:
BDX33BG
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Transistor Type

NPN

Maximum Collector Emitter Voltage

80 V dc

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Emitter Base Voltage

5 V dc

Pin Count

3

Number of Elements per Chip

1

Dimensions

10.53 x 4.83 x 9.28mm

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
CN
The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.

High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0
Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
Monolithic Construction with Build-In Base-Emitter Shunt resistors
TO-220AB Compact Package
Pb-Free Packages are Available

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links