onsemi Digital Transistor, 80 V NPN Through Hole TO-220, 3-Pin

View all Bipolar Transistors
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Subtotal (1 tube of 50 units)*

PHP1,881.60

(exc. VAT)

PHP2,107.40

(inc. VAT)

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In Stock
  • Plus 50 unit(s) shipping from February 23, 2026
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Units
Per Unit
Per Tube*
50 - 200PHP37.632PHP1,881.60
250 - 450PHP36.503PHP1,825.15
500 - 1200PHP35.408PHP1,770.40
1250 - 2450PHP34.345PHP1,717.25
2500 +PHP33.315PHP1,665.75

*price indicative

RS Stock No.:
186-7366
Mfr. Part No.:
BDX33BG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Digital Transistor

Package Type

TO-220

Maximum Collector Emitter Voltage Vceo

80V

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

80V

Maximum Emitter Base Voltage VEBO

5V

Maximum Power Dissipation Pd

70W

Transistor Polarity

NPN

Minimum DC Current Gain hFE

750

Pin Count

3

Maximum Operating Temperature

150°C

Height

9.28mm

Standards/Approvals

No

Width

4.83 mm

Length

10.53mm

Automotive Standard

No

COO (Country of Origin):
CN
The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.

High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0

Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C

Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C

Monolithic Construction with Build-In Base-Emitter Shunt resistors

TO-220AB Compact Package

Pb-Free Packages are Available

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