onsemi Digital Transistor, 80 V NPN Through Hole TO-220, 3-Pin

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Subtotal (1 tube of 50 units)*

PHP1,952.25

(exc. VAT)

PHP2,186.50

(inc. VAT)

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In Stock
  • 200 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
50 - 200PHP39.045PHP1,952.25
250 - 450PHP38.264PHP1,913.20
500 - 1200PHP37.499PHP1,874.95
1250 - 2450PHP36.749PHP1,837.45
2500 +PHP36.014PHP1,800.70

*price indicative

RS Stock No.:
186-7368
Mfr. Part No.:
BDX53BG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Digital Transistor

Package Type

TO-220

Maximum Collector Emitter Voltage Vceo

80V

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

80V

Transistor Polarity

NPN

Minimum DC Current Gain hFE

750

Maximum Power Dissipation Pd

65W

Maximum Emitter Base Voltage VEBO

5V

Maximum Operating Temperature

150°C

Pin Count

3

Height

9.28mm

Series

BDX53B

Width

4.83 mm

Standards/Approvals

No

Length

10.53mm

Automotive Standard

No

COO (Country of Origin):
CN
The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.

High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc

Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C

Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc

Monolithic Construction with Built-In Base-Emitter Shunt Resistors

TO-220AB Compact Package

Pb-Free Packages are Available

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