onsemi BDX53BG Digital Transistor, 80 V dc NPN Through Hole TO-220, 3-Pin

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PHP412.11

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PHP461.56

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Packaging Options:
RS Stock No.:
186-7938
Mfr. Part No.:
BDX53BG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Digital Transistor

Package Type

TO-220

Maximum Collector Emitter Voltage Vceo

80V dc

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

80V dc

Maximum Emitter Base Voltage VEBO

5V dc

Minimum DC Current Gain hFE

750

Transistor Polarity

NPN

Maximum Power Dissipation Pd

65W

Maximum Operating Temperature

150°C

Pin Count

3

Standards/Approvals

No

Height

9.28mm

Length

10.53mm

Series

BDX53B

Width

4.83 mm

Automotive Standard

No

COO (Country of Origin):
CN
The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.

High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc

Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C

Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc

Monolithic Construction with Built-In Base-Emitter Shunt Resistors

TO-220AB Compact Package

Pb-Free Packages are Available

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