onsemi MJB45H11T4G Digital Transistor, -80 V PNP Surface, 2-Pin
- RS Stock No.:
- 186-8039
- Mfr. Part No.:
- MJB45H11T4G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP672.22
(exc. VAT)
PHP752.89
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 60 unit(s) shipping from March 30, 2026
- Plus 800 unit(s) shipping from June 11, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP67.222 | PHP672.22 |
| 20 - 40 | PHP65.766 | PHP657.66 |
| 50 - 90 | PHP64.432 | PHP644.32 |
| 100 - 240 | PHP51.571 | PHP515.71 |
| 250 + | PHP50.601 | PHP506.01 |
*price indicative
- RS Stock No.:
- 186-8039
- Mfr. Part No.:
- MJB45H11T4G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 80V | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum DC Current Gain hFE | 60 | |
| Transistor Polarity | PNP | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Pin Count | 2 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.29mm | |
| Height | 4.83mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 80V | ||
Maximum Power Dissipation Pd 50W | ||
Minimum DC Current Gain hFE 60 | ||
Transistor Polarity PNP | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Pin Count 2 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.29mm | ||
Height 4.83mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
PbFree Packages are Available