onsemi MJB45H11T4G Digital Transistor, -80 V PNP Surface, 2-Pin

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Subtotal (1 pack of 10 units)*

PHP646.00

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PHP723.50

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP64.60PHP646.00
20 - 40PHP63.201PHP632.01
50 - 90PHP61.919PHP619.19
100 - 240PHP49.56PHP495.60
250 +PHP48.628PHP486.28

*price indicative

Packaging Options:
RS Stock No.:
186-8039
Mfr. Part No.:
MJB45H11T4G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Digital Transistor

Maximum Collector Emitter Voltage Vceo

-80V

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

80V

Minimum DC Current Gain hFE

60

Maximum Emitter Base Voltage VEBO

5V dc

Transistor Polarity

PNP

Maximum Power Dissipation Pd

50W

Pin Count

2

Maximum Operating Temperature

150°C

Height

4.83mm

Standards/Approvals

No

Length

10.29mm

Width

15.88 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.

Low Collector-Emitter Saturation Voltage -

VCE(sat) = 1.0 V (Max) @ 8.0 A

Fast Switching Speeds

Complementary Pairs Simplifies Designs

NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable

PbFree Packages are Available

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