onsemi BD241CG NPN Digital Transistor, 115 V, 3-Pin TO-220

View all Bipolar Transistors
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Subtotal (1 tube of 50 units)*

PHP1,277.10

(exc. VAT)

PHP1,430.35

(inc. VAT)

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  • 100 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
50 - 200PHP25.542PHP1,277.10
250 - 450PHP24.776PHP1,238.80
500 - 1200PHP24.032PHP1,201.60
1250 - 2450PHP23.312PHP1,165.60
2500 +PHP22.612PHP1,130.60

*price indicative

RS Stock No.:
186-7353
Mfr. Part No.:
BD241CG
Manufacturer:
onsemi
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Brand

onsemi

Transistor Type

NPN

Maximum Collector Emitter Voltage

115 V

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

40 W

Minimum DC Current Gain

2.5

Transistor Configuration

Single

Maximum Emitter Base Voltage

5 V dc

Pin Count

3

Number of Elements per Chip

1

Dimensions

10.53 x 4.83 x 9.28mm

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
CN
The 3 A, 100V PNP Bipolar Power Transistor designed for use in general purpose amplifier and switching applications. BD241C (NPN), BD242B (PNP) and BD242C (PNP) are complementary devices.

Collector-Emitter Saturation Voltage - VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc
Collector-Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc (Min.) BD242B = 100 Vdc (Min.) BD241C, BD242C
High Current Gain - Bandwidth ProductfT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO-220 AB Package
Pb-Free Packages are Available

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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