Nexperia PBSS4160DPN,115 Transistor, 1 A NPN + PNP, 60 V, 6-Pin TSOP

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Subtotal (1 pack of 20 units)*

PHP371.82

(exc. VAT)

PHP416.44

(inc. VAT)

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Units
Per Unit
Per Pack*
20 - 20PHP18.591PHP371.82
40 - 80PHP16.732PHP334.64
100 - 180PHP15.059PHP301.18
200 - 380PHP13.553PHP271.06
400 +PHP12.197PHP243.94

*price indicative

Packaging Options:
RS Stock No.:
485-313
Mfr. Part No.:
PBSS4160DPN,115
Manufacturer:
Nexperia
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Brand

Nexperia

Product Type

Transistor

Maximum DC Collector Current Idc

1A

Maximum Collector Emitter Voltage Vceo

60V

Package Type

TSOP

Mount Type

Surface

Transistor Configuration

Isolated

Maximum Collector Base Voltage VCBO

80V

Maximum Transition Frequency ft

220MHz

Maximum Power Dissipation Pd

700mW

Transistor Polarity

NPN + PNP

Maximum Emitter Base Voltage VEBO

5V

Minimum Operating Temperature

-65°C

Minimum DC Current Gain hFE

100

Pin Count

6

Maximum Operating Temperature

150°C

Length

2.9mm

Height

1mm

Series

PBSS4160DPN

Standards/Approvals

No

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY

Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia


A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia


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