Nexperia PBSS5160U,115 Transistor, -1 A PNP, -60 V, 3-Pin UMT

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Subtotal (1 pack of 20 units)*

PHP231.28

(exc. VAT)

PHP259.04

(inc. VAT)

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In Stock
  • Plus 160 unit(s) shipping from March 30, 2026
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Units
Per Unit
Per Pack*
20 - 20PHP11.564PHP231.28
40 - 80PHP10.408PHP208.16
100 - 180PHP9.367PHP187.34
200 - 380PHP8.43PHP168.60
400 +PHP7.587PHP151.74

*price indicative

Packaging Options:
RS Stock No.:
485-353
Mfr. Part No.:
PBSS5160U,115
Manufacturer:
Nexperia
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Brand

Nexperia

Product Type

Transistor

Maximum DC Collector Current Idc

-1A

Maximum Collector Emitter Voltage Vceo

-60V

Package Type

UMT

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

80V

Minimum DC Current Gain hFE

100

Maximum Emitter Base Voltage VEBO

5V

Maximum Power Dissipation Pd

415mW

Minimum Operating Temperature

-65°C

Maximum Transition Frequency ft

185MHz

Transistor Polarity

PNP

Maximum Operating Temperature

150°C

Pin Count

3

Length

2mm

Height

0.95mm

Standards/Approvals

No

Series

PBSS5160U

Automotive Standard

AEC-Q101

Low Saturation Voltage PNP Transistors


A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia


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