Nexperia PBSS5160U,115 PNP Transistor, -1 A, -60 V, 3-Pin UMT

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Subtotal (1 reel of 3000 units)*

PHP19,695.00

(exc. VAT)

PHP22,059.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 +PHP6.565PHP19,695.00

*price indicative

RS Stock No.:
166-1469
Mfr. Part No.:
PBSS5160U,115
Manufacturer:
Nexperia
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Brand

Nexperia

Transistor Type

PNP

Maximum DC Collector Current

-1 A

Maximum Collector Emitter Voltage

-60 V

Package Type

UMT

Mounting Type

Surface Mount

Maximum Power Dissipation

415 mW

Minimum DC Current Gain

200

Transistor Configuration

Single

Maximum Collector Base Voltage

80 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

185 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 2.2 x 1.35mm

Maximum Operating Temperature

+150 °C

Low Saturation Voltage PNP Transistors


A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



Bipolar Transistors, Nexperia

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