Nexperia PBSS4160DS,115 Transistor, 1 A NPN, 60 V, 6-Pin TSOP

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Subtotal (1 pack of 20 units)*

PHP380.38

(exc. VAT)

PHP426.02

(inc. VAT)

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  • 22,340 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
20 - 20PHP19.019PHP380.38
40 - 80PHP18.639PHP372.78
100 - 180PHP18.266PHP365.32
200 - 380PHP17.90PHP358.00
400 +PHP17.542PHP350.84

*price indicative

Packaging Options:
RS Stock No.:
485-391
Mfr. Part No.:
PBSS4160DS,115
Manufacturer:
Nexperia
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Brand

Nexperia

Product Type

Transistor

Maximum DC Collector Current Idc

1A

Maximum Collector Emitter Voltage Vceo

60V

Package Type

TSOP

Mount Type

Surface

Transistor Configuration

Isolated

Maximum Collector Base Voltage VCBO

80V

Maximum Transition Frequency ft

220MHz

Maximum Emitter Base Voltage VEBO

5V

Maximum Power Dissipation Pd

700mW

Transistor Polarity

NPN

Minimum DC Current Gain hFE

100

Minimum Operating Temperature

-65°C

Pin Count

6

Maximum Operating Temperature

150°C

Width

1.5 mm

Length

2.9mm

Series

PBSS4160DS

Standards/Approvals

No

Height

1mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY

Low Saturation Voltage NPN Transistors


A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia


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