onsemi 650 V 40 A Diode 3-Pin TO-247-3LD FFSH4065BDN
- RS Stock No.:
- 277-074
- Mfr. Part No.:
- FFSH4065BDN
- Manufacturer:
- onsemi
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Subtotal (1 unit)*
PHP771.53
(exc. VAT)
PHP864.11
(inc. VAT)
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- Shipping from May 11, 2026
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP771.53 |
| 10 - 99 | PHP694.72 |
| 100 - 499 | PHP640.61 |
| 500 - 999 | PHP594.35 |
| 1000 + | PHP532.39 |
*price indicative
- RS Stock No.:
- 277-074
- Mfr. Part No.:
- FFSH4065BDN
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-3LD | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | FFSH | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 889A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-3LD | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series FFSH | ||
Pin Count 3 | ||
Peak Reverse Current Ir 160μA | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 889A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Schottky diode offer superior switching performance and higher reliability compared to traditional Silicon diodes. It features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance, making SiC the next generation of power semiconductors. The system benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, and smaller, more cost-effective system designs. These advantages make SiC Schottky diodes ideal for high-performance power applications.
Max junction temperature 175°C
Avalanche rated 94 mJ
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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