onsemi 650 V 20 A Schottky Diode Schottky 3-Pin TO-247 FFSH2065BDN-F085
- RS Stock No.:
- 185-9313
- Mfr. Part No.:
- FFSH2065BDN-F085
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP1,050.94
(exc. VAT)
PHP1,177.06
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 230 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 18 | PHP525.47 | PHP1,050.94 |
| 20 - 48 | PHP509.705 | PHP1,019.41 |
| 50 - 198 | PHP489.32 | PHP978.64 |
| 200 - 498 | PHP464.86 | PHP929.72 |
| 500 + | PHP436.97 | PHP873.94 |
*price indicative
- RS Stock No.:
- 185-9313
- Mfr. Part No.:
- FFSH2065BDN-F085
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | EliteSiC | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 42A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Pb-Free | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Width | 4.82 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Through Hole | ||
Product Type Schottky Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series EliteSiC | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 42A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 160μA | ||
Maximum Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Pb-Free | ||
Height 20.82mm | ||
Length 15.87mm | ||
Width 4.82 mm | ||
Automotive Standard AEC-Q101 | ||
Non Compliant
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-247-3L Auto SiC 650V
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
Related links
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