onsemi 650 V 20 A Diode 3-Pin TO-247-3LD FFSH2065BDN
- RS Stock No.:
- 277-071
- Mfr. Part No.:
- FFSH2065BDN
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP521.04
(exc. VAT)
PHP583.56
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 04, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 18 | PHP260.52 | PHP521.04 |
| 20 - 198 | PHP234.775 | PHP469.55 |
| 200 - 998 | PHP216.445 | PHP432.89 |
| 1000 - 1998 | PHP200.735 | PHP401.47 |
| 2000 + | PHP179.79 | PHP359.58 |
*price indicative
- RS Stock No.:
- 277-071
- Mfr. Part No.:
- FFSH2065BDN
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-3LD | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | FFSH | |
| Diode Configuration | Single | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 160μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 650A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-3LD | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series FFSH | ||
Diode Configuration Single | ||
Pin Count 3 | ||
Peak Reverse Current Ir 160μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 650A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Schottky diode offer superior switching performance and higher reliability compared to traditional Silicon diodes. It features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance, making SiC the next generation of power semiconductors. The system benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, and smaller, more cost-effective system designs. These advantages make SiC Schottky diodes ideal for high-performance power applications.
Max junction temperature 175°C
Avalanche rated 49 mJ
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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