DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 3.1 A, 30 V Enhancement, 8-Pin
- RS Stock No.:
- 922-8594
- Mfr. Part No.:
- ZXMHC3A01T8TA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1000 units)*
PHP76,317.00
(exc. VAT)
PHP85,475.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from April 13, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | PHP76.317 | PHP76,317.00 |
| 2000 - 3000 | PHP75.614 | PHP75,614.00 |
| 4000 - 9000 | PHP74.628 | PHP74,628.00 |
| 10000 + | PHP73.667 | PHP73,667.00 |
*price indicative
- RS Stock No.:
- 922-8594
- Mfr. Part No.:
- ZXMHC3A01T8TA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P, Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 330mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.9nC | |
| Forward Voltage Vf | 0.95V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.7W | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Full Bridge | |
| Height | 1.6mm | |
| Width | 3.7 mm | |
| Standards/Approvals | MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, J-STD-020 | |
| Length | 6.7mm | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P, Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 330mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.9nC | ||
Forward Voltage Vf 0.95V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.7W | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Full Bridge | ||
Height 1.6mm | ||
Width 3.7 mm | ||
Standards/Approvals MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, J-STD-020 | ||
Length 6.7mm | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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