DiodesZetex Full Bridge 4 Type P, Type N-Channel MOSFET, 850 mA, 100 V Enhancement, 8-Pin SOIC ZXMHC10A07N8TC
- RS Stock No.:
- 751-5332
- Mfr. Part No.:
- ZXMHC10A07N8TC
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP428.45
(exc. VAT)
PHP479.85
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from April 13, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP85.69 | PHP428.45 |
| 25 - 120 | PHP83.12 | PHP415.60 |
| 125 - 495 | PHP80.626 | PHP403.13 |
| 500 - 2495 | PHP78.206 | PHP391.03 |
| 2500 + | PHP75.858 | PHP379.29 |
*price indicative
- RS Stock No.:
- 751-5332
- Mfr. Part No.:
- ZXMHC10A07N8TC
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 850mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 0.95V | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Power Dissipation Pd | 1.36W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Full Bridge | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | RoHS, J-STD-020, AEC-Q101, MIL-STD-202, UL 94V-0 | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 850mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 0.95V | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Power Dissipation Pd 1.36W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Full Bridge | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals RoHS, J-STD-020, AEC-Q101, MIL-STD-202, UL 94V-0 | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4 mm | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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