MPN

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin

RS Stock No.:: 922-7888
Mfr. Part No.:: ZXMHC6A07T8TA
Manufacturer:: DiodesZetex

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 1000 units)*

PHP85,867.00

(exc. VAT)

PHP96,171.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

1,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Reel*
1000 - 1000	PHP85.867	PHP85,867.00
2000 - 3000	PHP85.076	PHP85,076.00
4000 - 9000	PHP83.967	PHP83,967.00
10000 +	PHP82.886	PHP82,886.00

*price indicative

RS Stock No.:: 922-7888
Mfr. Part No.:: ZXMHC6A07T8TA
Manufacturer:: DiodesZetex

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Product Type	Power MOSFET
	Channel Type	Type N, Type P
	Maximum Continuous Drain Current Id	1.8A
	Maximum Drain Source Voltage Vds	60V
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	425mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	150°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.7W
	Forward Voltage Vf	0.85V
	Typical Gate Charge Qg @ Vgs	3.2nC
	Transistor Configuration	Full Bridge
	Maximum Operating Temperature	-55°C
	Height	1.6mm
	Width	3.7 mm
	Standards/Approvals	J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0
	Length	6.7mm
	Number of Elements per Chip	4
	Automotive Standard	No

	Select all
	Brand DiodesZetex
	Product Type Power MOSFET
	Channel Type Type N, Type P
	Maximum Continuous Drain Current Id 1.8A
	Maximum Drain Source Voltage Vds 60V
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 425mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature 150°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.7W
	Forward Voltage Vf 0.85V
	Typical Gate Charge Qg @ Vgs 3.2nC
	Transistor Configuration Full Bridge
	Maximum Operating Temperature -55°C
	Height 1.6mm
	Width 3.7 mm
	Standards/Approvals J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0
	Length 6.7mm
	Number of Elements per Chip 4
	Automotive Standard No

COO (Country of Origin):: DE

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin

FREE delivery for orders over ₱3,000.00

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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