DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

PHP94,557.50

(exc. VAT)

PHP105,905.00

(inc. VAT)

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Units
Per Unit
Per Reel*
2500 +PHP37.823PHP94,557.50

*price indicative

RS Stock No.:
169-0719
Mfr. Part No.:
ZXMHC6A07N8TC
Manufacturer:
DiodesZetex
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Brand

DiodesZetex

Product Type

Power MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

3.2nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.8V

Maximum Power Dissipation Pd

1.36W

Maximum Operating Temperature

-55°C

Transistor Configuration

Full Bridge

Standards/Approvals

UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202

Width

4 mm

Length

5mm

Height

1.5mm

Number of Elements per Chip

4

Automotive Standard

No

COO (Country of Origin):
CN

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.


MOSFET Transistors, Diodes Inc.


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