Vishay IRFU9310 Type P-Channel Power MOSFET, -1.8 A, -400 V Enhancement, 3-Pin IPAK IRFU9310PBF

This image is representative of the product range

Bulk discount available
View bulk pricing options

Subtotal (1 tube of 75 units)*

PHP4,191.90

(exc. VAT)

PHP4,694.925

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 13,275 unit(s) shipping from August 10, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per Unit
Per Tube*
75 - 75PHP55.892PHP4,191.90
150 - 225PHP54.215PHP4,066.13
300 - 675PHP52.589PHP3,944.18
750 - 975PHP51.011PHP3,825.83
1050 +PHP49.481PHP3,711.08

*price indicative

RS Stock No.:
919-4505
Mfr. Part No.:
IRFU9310PBF
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

-1.8A

Maximum Drain Source Voltage Vds

-400V

Series

IRFU9310

Package Type

IPAK

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Forward Voltage Vf

-4V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

13nC

Maximum Power Dissipation Pd

50W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

2.38mm

Length

6.73mm

Height

6.22mm

Automotive Standard

No

Vishay IRFU9310 Series Power MOSFET, -400V Maximum Drain Source Voltage, 50W Maximum Power Dissipation - IRFU9310PBF


This power MOSFET is a P-channel enhancement transistor designed for high-voltage switching applications where through-hole mounting is required. It operates over a wide temperature range and is RoHS-compliant, offering a compact IPAK package suited to circuits needing low continuous currents and robust voltage handling without surface-mount assembly.

Features and Benefits:


• Rated for -400V drain-source voltage enabling high-voltage switching
• Maximum continuous drain current of -1.8A supporting low-current loads
• Maximum dissipation 50W allowing higher power handling in thermal designs
• Drain-source resistance 7Ω reducing conduction losses at low currents
• Gate charge 13nC at 20V Vgs permitting predictable switching performance
• Operates from -55°C to 150°C for elevated temperature environments

Applications


• Suitable for high-voltage reverse-polarity protection circuits
• Ideal for valve or actuator control in industrial systems
• Used with discrete switching stages in power supplies
• Can be used for telecom line protection in legacy equipment
• Used for low-current load switching in instrumentation

What package type will I mount on a PCB for prototyping?


It is supplied in an IPAK through-hole package with three pins for conventional soldering and prototyping on drilled boards.

How should thermal limits guide heatsinking in designs?


The device’s 50W maximum dissipation requires a suitable heatsink or thermal path when switching near rated current or in elevated ambient temperatures to avoid exceeding junction limits.

What gate drive considerations are necessary for switching?


Expect a typical gate charge of 13nC at 20V Vgs

design gate drivers to supply sufficient charge quickly to meet desired switching speeds while managing gate-source voltage within ±20V.

Is it suitable for automotive electronics?


It is not specified as automotive grade

evaluate system requirements and environmental qualifications before use in vehicle applications.

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy